 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD818 DESCRIPTION *High Collector-Base Breakdown Voltage: V(BR)CBO= 1500V (Min.) *Low Collector Saturation Voltage*High Switching Speed APPLICATIONS *Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i MAX 1500 600 5 2.5 -2.5 50 UNIT V V .cn mi e V IC Collector Current-Continuous A IE Emitter Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature A PC W Tj 150 Tstg Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD818 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 10 A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE DC Current Gain IC= 0.5A; VCE= 5V COB Output Capacitance fT Current-Gain--Bandwidth Product tf Fall Time w w w. sem isc IC= 0.1A; VCE= 10V ICP= 2A; IB1(end)= 0.6A IE= 0; VCB= 10V; ftest= 1.0MHz .cn i 8 95 pF 3 MHz 1.0 s isc Websitewww.iscsemi.cn |
Price & Availability of 2SD818
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |